SavantIC Semiconductor Product Specification 2SB1287 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1765 ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -8 V IC Collector current -2 A ICM Collector current-peak -3 A PC Collector power dissipation Ta=25 2 W TC=25 20 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1287 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -100 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-7V; IC=0 -3.0 mA hFE DC current gain IC=-1A ; VCE=-2V COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 2 MIN TYP. 1000 MAX UNIT 10000 35 pF SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1287