Inchange Semiconductor Product Specification 2SD1933 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector -emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A ICM Collector current-peak 6 A PC Collector power dissipation TC=25℃ 30 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1933 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50μA; IE=0 80 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA;IB=0 80 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=4mA 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=2A ; VCE=3V fT Transition frequency IE=-0.2A ; VCE=5V;f=10MHz 40 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 35 pF 2 1000 10000 Inchange Semiconductor Product Specification 2SD1933 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3