ISC 2SD1933

Inchange Semiconductor
Product Specification
2SD1933
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·DARLINGTON
·Complement to type 2SB1342
·High DC current gain
APPLICATIONS
·Low frequency power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector -emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
4
A
ICM
Collector current-peak
6
A
PC
Collector power dissipation
TC=25℃
30
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1933
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=50μA; IE=0
80
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA;IB=0
80
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=4mA
1.5
V
ICBO
Collector cut-off current
VCB=80V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE
DC current gain
IC=2A ; VCE=3V
fT
Transition frequency
IE=-0.2A ; VCE=5V;f=10MHz
40
MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
35
pF
2
1000
10000
Inchange Semiconductor
Product Specification
2SD1933
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3