SAVANTIC 2SD1913

SavantIC Semiconductor
Product Specification
2SD1913
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1274
·High reliability.
·High breakdown voltage
·Low saturation voltage.
·Wide area of safe operation
APPLICATIONS
·60V/3A low-frequency power amplifier
·General power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
3
A
ICM
Collector current-peak
8
A
PC
Collector dissipation
TC=25
20
W
2
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1913
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
60
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; RBE=?
60
V
V(BR)EBO
Base-emitter breakdown voltage
IE=1mA; IC=0
6
V
Collector-emitter saturation voltage
IC=2A ; IB=0.2A
0.4
1.0
V
VBE
Base-emitter voltage
IC=0.5A ; VCE=5V
0.8
1.0
V
ICBO
Collector cut-off current
VCB=40V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V;IC=0
0.1
mA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
70
hFE-2
DC current gain
IC=3A ; VCE=5V
20
fT
Transition frequency
IC=0.5A ; VCE=5V
100
MHz
Cob
Output capacitance
IE=0 ; VCB=10V; f=1MHz
40
pF
VCEsat
hFE-1 classifications
Q
R
S
70-140
100-200
140-280
2
280
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD1913
SavantIC Semiconductor
Product Specification
2SD1913
Silicon NPN Power Transistors
4