SAVANTIC 2SB596

SavantIC Semiconductor
Product Specification
2SB596
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SD526
·Good linearity of hFE
APPLICATIONS
·Power amplifier applications
·Recommend for 20 25W high fidelity
audio frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-4
A
IE
Emitter current
-4
A
IB
Base current
-3
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB596
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
-80
V
V(BR)EBO
Emitter-base breakdown votage
IE=-10mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-3 A;IB=-0.3 A
-1.7
V
VBE
Base-emitter on voltage
IC=-3A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-30
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
µA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
40
hFE-2
DC current gain
IC=-3A ; VCE=-5V
15
fT
Transition frequency
IC=-0.5A ; VCE=-5V
3
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
VCEsat
CONDITIONS
hFE-1 classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
MAX
UNIT
240
MHz
130
pF
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SB596
SavantIC Semiconductor
Product Specification
2SB596
Silicon PNP Power Transistors
4