ISC 2SA1104

Inchange Semiconductor
Product Specification
2SA1104
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·High frequency
·High power dissipation
APPLICATIONS
·For use in audio and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-6
V
-8
A
80
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1104
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.8
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
μA
hFE
DC current gain
IC=-3A ; VCE=4V
Transition frequency
IE=1A ; VCE=-12V
fT
CONDITIONS
2
MIN
TYP.
MAX
-120
UNIT
V
50
180
20
MHz
Inchange Semiconductor
Product Specification
2SA1104
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3