Inchange Semiconductor Product Specification 2SA1104 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·High frequency ·High power dissipation APPLICATIONS ·For use in audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V -8 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1104 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.8 V ICBO Collector cut-off current VCB=-120V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -100 μA hFE DC current gain IC=-3A ; VCE=4V Transition frequency IE=1A ; VCE=-12V fT CONDITIONS 2 MIN TYP. MAX -120 UNIT V 50 180 20 MHz Inchange Semiconductor Product Specification 2SA1104 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3