SavantIC Semiconductor Product Specification 2SD1110 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB849 ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V 7 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1110 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V VBE(sat) Base-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V ICBO Collector cut-off current VCB=120V; IE=0 50 µA IEBO Emitter cut-off current VEB=6V; IC=0 50 µA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE -2 DC current gain IC=1A ; VCE=5V 40 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 190 pF fT Transition frequency IC=0.2A ; VCE=5V 15 MHz 2 MIN TYP. MAX 120 UNIT V 200 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 2SD1110