SavantIC Semiconductor Product Specification 2SD772 2SD772A 2SD772B Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High breakdown voltage ·High speed switching APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD772 VCBO Collector-base voltage 2SD772A VALUE UNIT 150 Open emitter 200 V 250 2SD772B VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICM Collector current-Peak 10 A PC Collector dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150 TC=25 SavantIC Semiconductor Product Specification 2SD772 2SD772A 2SD772B Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; L=25mH VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.6 V Base-emitter on voltage IC=5A ; VCE=4V 1.5 V 1.0 mA 0.1 mA 1 µs VBE ICBO Collector cut-off current CONDITIONS 2SD772 VCB=150V; IE=0 2SD772A VCB=200V; IE=0 2SD772B VCB=250V; IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=5A ; VCE=4V tf Fall time IC=5A ; VEB=-5V, IB1=0.8A fT Transition frequency IC=0.5A ; VCE=10V 2 MIN TYP. MAX 80 UNIT V 14 40 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD772 2SD772A 2SD772B PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3