ISC 2SD772A

Inchange Semiconductor
Product Specification
2SD772 2SD772A 2SD772B
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·High speed switching
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SD772
VCBO
Collector-base voltage
2SD772A
VALUE
UNIT
150
Open emitter
2SD772B
200
V
250
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
5
A
ICM
Collector current-Peak
10
A
PC
Collector dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD772 2SD772A 2SD772B
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; L=25mH
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
1.6
V
Base-emitter on voltage
IC=5A ; VCE=4V
1.5
V
1.0
mA
0.1
mA
1
μs
VBE
ICBO
Collector
cut-off current
CONDITIONS
2SD772
VCB=150V; IE=0
2SD772A
VCB=200V; IE=0
2SD772B
VCB=250V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
tf
Fall time
IC=5A ; VEB=-5V, IB1=0.8A
fT
Transition frequency
IC=0.5A ; VCE=10V
2
MIN
TYP.
MAX
80
UNIT
V
14
40
MHz
Inchange Semiconductor
Product Specification
2SD772 2SD772A 2SD772B
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3