SavantIC Semiconductor Product Specification BD249/A/B/C Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS BD249 VCEO VCBO Collector-emitter voltage Collector-base voltage BD249A BD249B Open base 60 80 BD249C 100 BD249 55 BD249A BD249B Emitter-base voltage UNIT 45 Open base BD249C VEBO VALUE 70 90 V V 115 Open collector 5 V IC Collector current 25 A ICM Collector current-peak 40 A IB Base current 5 A PC Collector power dissipation 125 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification BD249/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD249 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 45 BD249A 60 IC=30mA ;IB=0 V BD249B 80 BD249C 100 VCEsat-1 Collector-emitter saturation voltage IC=15A ;IB=1.5A 1.8 V VCEsat-2 Collector-emitter saturation voltage IC=25A ;IB=5A 4 V VBE-1 Base-emitter on voltage IC=15A ; VCE=4V 2 V VBE-2 Base-emitter on voltage IC=25A ; VCE=4V 4 V ICEO Collector cut-off current 1 mA 1 mA BD249/249A VCE=30V; IB=0 BD249B/249C VCE=60V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1.5A ; VCE=4V 25 hFE-2 DC current gain IC=15A ; VCE=4V 10 hFE-3 DC current gain IC=25A ; VCE=4V 5 Switching times ton Turn-on time toff Turn-off time IC=1A; IB1=-IB2=0.5A RL=5A 2 0.3 µs 0.9 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 BD249/A/B/C