SavantIC Semiconductor Product Specification 2SD1025 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-Peak 12 A IB Base current 0.5 A IBM Base current-Peak 1.0 A PT Total power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL R8j-C PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification 2SD1025 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=10mA 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=10mA 2.0 V ICBO Collector cut-off current VCB=200V ;IE=0 0.1 mA ICEO Collector cut-off current VCE=200V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE DC current gain IC=5A ; VCE=3V Transition frequency IC=0.8A ; VCE=10V fT CONDITIONS MIN TYP. MAX 200 UNIT V 1500 30000 20 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=5A IB1=- IB2=10mA RL=5C; VBB2=4V 2 2.0 µs 8.0 µs 5.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SD1025