Inchange Semiconductor Product Specification BD543/A/B/C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD544/A/B/C ・8 A continuous collector current ・10 A peak Collector current PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 半导 Absolute maximum ratings (Ta=25℃) SYMBOL 固电 VCBO PARAMETER D N O IC BD543 BD543A M E S GE Collector-base voltage Open emitter BD543B VCEO VEBO N A H INC VALUE 60 V 80 100 BD543 40 BD543A UNIT 40 BD543C Collector-emitter voltage Emitter-base voltage R O T UC CONDITIONS 60 Open base V BD543B 80 BD543C 100 Open collector 5 V IC Collector current 8 A ICM Collector current-peak 10 A PC Collector power dissipation 70 W Tj Junction temperature -65~150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD543/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD543 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 40 BD543A 60 IC=30mA ;IB=0 V BD543B 80 BD543C 100 VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=0.3A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=1A 0.5 V VCEsat-3 Collector-emitter saturation voltage IC=8A ;IB=1.6A 1 V VBE Base-emitter on voltage IC=5A ; VCE=4V 1.6 V ICEO Collector cut-off current 0.7 mA 1 mA IEBO BD543/543A VCE=30V;IB=0 BD543B/543C VCE=60V;IB=0 导体 半 电 固 Emitter cut-off current hFE-1 DC current gain hFE-2 DC current gain hFE-3 DC current gain R O T UC D N O IC VEB=5V; IC=0 M E S GE IC=1A ; VCE=4V 60 N A H INC IC=3A ; VCE=4V 40 IC=5A ; VCE=4V 15 ton Turn-on time toff Turn-off time IC=6A; IB1=-IB2=0.6A RL=5Ω Switching times 2 0.6 μs 1.0 μs Inchange Semiconductor Product Specification BD543/A/B/C Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3