ISC BD543A

Inchange Semiconductor
Product Specification
BD543/A/B/C
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type BD544/A/B/C
・8 A continuous collector current
・10 A peak Collector current
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
半导
Absolute maximum ratings (Ta=25℃)
SYMBOL
固电
VCBO
PARAMETER
D
N
O
IC
BD543
BD543A
M
E
S
GE
Collector-base voltage
Open emitter
BD543B
VCEO
VEBO
N
A
H
INC
VALUE
60
V
80
100
BD543
40
BD543A
UNIT
40
BD543C
Collector-emitter voltage
Emitter-base voltage
R
O
T
UC
CONDITIONS
60
Open base
V
BD543B
80
BD543C
100
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
-65~150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
BD543/A/B/C
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD543
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
40
BD543A
60
IC=30mA ;IB=0
V
BD543B
80
BD543C
100
VCEsat-1
Collector-emitter saturation voltage
IC=3A ;IB=0.3A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=5A ;IB=1A
0.5
V
VCEsat-3
Collector-emitter saturation voltage
IC=8A ;IB=1.6A
1
V
VBE
Base-emitter on voltage
IC=5A ; VCE=4V
1.6
V
ICEO
Collector
cut-off current
0.7
mA
1
mA
IEBO
BD543/543A
VCE=30V;IB=0
BD543B/543C
VCE=60V;IB=0
导体
半
电
固
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
hFE-3
DC current gain
R
O
T
UC
D
N
O
IC
VEB=5V; IC=0
M
E
S
GE
IC=1A ; VCE=4V
60
N
A
H
INC
IC=3A ; VCE=4V
40
IC=5A ; VCE=4V
15
ton
Turn-on time
toff
Turn-off time
IC=6A;
IB1=-IB2=0.6A
RL=5Ω
Switching times
2
0.6
μs
1.0
μs
Inchange Semiconductor
Product Specification
BD543/A/B/C
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3