SavantIC Semiconductor Product Specification 2SC4233 Silicon NPN Power Transistors ·Wit DESCRIPTION With TO-220C package ·High breakdown voltage ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1 A IBM Base current-peak 2 A PC Collector dissipation 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX UNIT 2.08 /W SavantIC Semiconductor Product Specification 2SC4233 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; RBE=9 VCE(sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBE(sat) Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V At rated voltage 100 µA 100 µA ICBO CONDITIONS MIN MAX 800 UNIT V Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated voltage hFE-1 DC current gain IC=1.5A ; VCE=5V 8 hFE-2 DC current gain IC=1mA ; VCE=5V 7 Transition frequency IC=0.3A ; VCE=10V fT TYP. 8 MHz Switching times ton Turn-on time tstg Storage time tf VBB2=4V; IC=1.5A IB1=0.3A;IB2=0.6A RL=170C Fall time 2 0.5 µs 3.5 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC4233