SAVANTIC 2SB761

SavantIC Semiconductor
Product Specification
2SB761 2SB761A
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SD856/856A
·Low collector saturation voltage
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
2SB761
VCBO
Collector-base voltage
-60
Open base
2SB761A
VEBO
Emitter-base voltage
V
-80
2SB761
Collector-emitter voltage
UNIT
-60
Open emitter
2SB761A
VCEO
VALUE
V
-80
Open collector
-5
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
PC
Collectorl power dissipation
35
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB761 2SB761A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO
VCEsat
PARAMETER
CONDITIONS
2SB761
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
-60
IC=-30mA; IB=0
2SB761A
V
-80
Collector-emitter saturation voltage
IC=-3 A;IB=-0.375 A
-1.2
V
VBE
Base-emitter on voltage
IC=-3A ; VCE=-4V
-1.8
V
ICES
Collector
cut-off current
-200
µA
2SB761
2SB761A
VCE=-60V; VBE=0
VCE=-80V; VBE=0
ICEO
Collector cut-off current
VCE=-60V; IB=0
-300
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-4V
40
hFE-2
DC current gain
IC=-3A ; VCE=-4V
10
250
Switching times
ton
Turn-on time
0.5
µs
2.0
µs
IC=-1A ; IB1=-IB2=-0.1 A
toff
Turn-off time
hFE-1 classifications
R
Q
P
40-90
70-150
120-250
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB761 2SB761A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3