SAVANTIC BD311

SavantIC Semiconductor
Product Specification
BD311
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High DC current gain
·Excellent safe operating area
·Complement to type BD312
APPLICATIONS
·Designed for power amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current(peak)
20
A
IB
Base current
4
A
PT
Total power dissipation
115
W
Tj
Junction temperature
-65~200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
MAX
UNIT
1.52
/W
SavantIC Semiconductor
Product Specification
BD311
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.5A
1.8
V
VBE
Base-emitter on voltage
IC=5A ;VCE=4V
1.5
V
ICBO
Collector cut-off current
VCB=rated;IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE-1
DC current gain
IC=5A ; VCE=4V
25
hFE-2
DC current gain
IC=10A ; VCE=4V
5
Transition frequency
IC=0.5A ; VCE=10V,f=1MHz
4
fT
CONDITIONS
2
MIN
TYP.
MAX
60
UNIT
V
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BD311