Inchange Semiconductor Product Specification BD317 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Excellent safe operating area ・Complement to type BD318 APPLICATIONS ・Designed for high power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL PARAMETER VALUE UNIT 100 V 100 V 7 V Collector current 16 A Collector current(peak) 20 A IB Base current 5 A PD Total power dissipation 200 W Tj Junction temperature -65~200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 0.875 ℃/W VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC ICM CONDITIONS Open emitter IC M E ES ANG INCH OND Open base Open collector TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BD317 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=0.8A 1.8 V VBE(on) Base-emitter on voltage IC=8A ;VCE=2.0V 1.5 V ICBO Collector cut-off current VCB=100V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=4V 25 hFE-2 DC current gain IC=10A ; VCE=4V 15 fT CONDITIONS 导体 半 电 固 Transition frequency MIN M E S GE 1.0 UNIT V R O T UC D N O IC 2 MAX 100 IC=1A ; VCE=20V,f=0.5MHz N A H INC TYP. MHz Inchange Semiconductor Product Specification BD317 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3