SAVANTIC 2N5430

SavantIC Semiconductor
Product Specification
2N5428 2N5430
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
: VCE(sat)=1.2V(Max)@IC=7A
·Excellent safe operating areas
APPLICATIONS
·Designed for switching and wide-band
amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
2N5428
Open emitter
2N5430
2N5428
VALUE
80
UNIT
V
100
Open base
2N5430
80
V
100
Open collector
6
V
IC
Collector current
7
A
IB
Base current
1
A
PD
Total power dissipation
40
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
4.37
/W
SavantIC Semiconductor
Product Specification
2N5428 2N5430
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
2N5428
MIN
TYP.
MAX
UNIT
80
IC=50mA ; IB=0
V
100
2N5430
VCEsat-1
Collector-emitter saturation voltage
IC=2A ;IB=0.2A
0.7
V
VCEsat-2
Collector-emitter saturation voltage
IC=7A I;B=0.7A
1.2
V
VBEsat-1
Base-emitter saturation voltage
IC=2A ;IB=0.2A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=7A I;B=0.7A
2.0
V
2N5428
VCE=75V;VBE(off)=1.5V
TC=150
0.1
1.0
2N5430
VCE=90V;VBE(off)=1.5V
TC=150
0.1
1.0
ICEX
Collector cut-off current
mA
ICBO
Collector cut-off current
VCB=Rated VCBO;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
60
hFE-2
DC current gain
IC=2A ; VCE=2V
60
hFE-3
DC current gain
IC=5A ; VCE=2V
40
Transition frequency
IC=0.5A ; VCE=10V;f=10MHz
20
fT
2
240
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2N5428 2N5430
SavantIC Semiconductor
Product Specification
2N5428 2N5430
Silicon NPN Power Transistors
4