SavantIC Semiconductor Product Specification Silicon NPN Darligton Power Transistors BD675/BD677/BD679 DESCRIPTION ·With TO-126 package ·Complement to type BD676/678/680 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general–purpose amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD675 VCBO VCEO Collector-base voltage Collector-emitter voltage BD677 Open emitter Emitter -base voltage 60 BD679 80 BD675 45 BD677 UNIT 45 Open base BD679 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 4 A ICM Collector current-Peak 7 A IB Base current 0.1 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a Thermal resistance from junction to ambient 100 K/W Rth j-mb Thermal resistance from junction to mounting base 3.12 K/W SavantIC Semiconductor Product Specification Silicon NPN Darligton Power Transistors BD675/BD677/BD679 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD675 V(BR)CEO V(BR)CBO Collector-emitter breakdown voltage Collector-base breakdown voltage BD677 IC=100mA; IB=0 MAX UNIT 80 BD675 45 IC=1mA; IE=0 V 60 BD679 BD677 TYP. 45 V 60 80 BD679 V(BR)EBO MIN Emitter-base breakdown voltage IE=5mA; IC=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=30mA 2.5 V VBE(on) Base-emitter on voltage IC=1.5A ; VCE=3V 2.5 V ICBO Collector cut-off current VCB=rated BVCBO; IE=0 Ta=100 0.2 2.0 mA ICEO Collector cut-off current VCE=1/2rated BVCEO; IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE DC current gain IC=1.5A ; VCE=3V 2 5 750 V SavantIC Semiconductor Product Specification Silicon NPN Darligton Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD675/BD677/BD679