SavantIC Semiconductor Product Specification BD676A/678A/680A/682 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type BD675A/677A/679A/681 ·DARLINGTON ·High DC current gain APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD676A VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage Emitter -base voltage BD678A VALUE -45 Open emitter -60 BD680A -80 BD682 -100 BD676A -45 BD678A UNIT Open base -60 BD680A -80 BD682 -100 Open collector V V -5 V IC Collector current -4 A ICM Collector current-Peak -6 A IB Base current -0.1 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD676A/678A/680A/682 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD676A V(BR)CEO VCEsat VBE(on) Collector-emitter breakdown voltage Collector-emitter saturation voltage Emitter-base voltage MIN TYP. MAX -45 BD678A -60 IC=-50mA; IB=0 V BD680A -80 BD682 -100 BD676A/678A/680A UNIT IC=-2A; IB=-40mA -2.8 V BD682 IC=-1.5A; IB=-30mA BD676A/678A/680A IC=-2A ; VCE=-3V BD682 IC=-1.5A ; VCE=-3V -2.5 -2.5 V ICBO Collector cut-off current VCB=rated BVCEO; IE=0 Ta=100 -0.2 -2.0 mA ICEO Collector cut-off current VCE=1/2rated BVCEO; IB=0 -0.5 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE DC current gain BD676A/678A/680A IC=-2A ; VCE=-3V 750 BD682 IC=-1.5A ; VCE=-3V 750 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD676A/678A/680A/682