SavantIC Semiconductor Product Specification MJ1000/1001 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS MJ1000 VCBO Collector-base voltage 60 Open base MJ1001 VEBO Emitter-base voltage V 80 MJ1000 Collector-emitter voltage UNIT 60 Open emitter MJ1001 VCEO VALUE V 80 Open collector 5 V IC Collector current 10 A IB Base current 0.1 A PD Total power dissipation 90 W Tj Junction temperature 200 Tstg Storage temperature -55~200 TC=25 SavantIC Semiconductor Product Specification MJ1000/1001 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS MJ1000 MIN TYP. MAX UNIT 60 IC=0.1A ;IB=0 MJ1001 V 80 VCE(sat)-1 Collector-emitter saturation voltage IC=3A; IB=12mA 2.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=8A; IB=40mA 4.0 V Base-emitter on voltage IC=3A ; VCE=3V 2.5 V MJ1000 VCE=60V; RBE=1.0k@ TC=150 1.0 5.0 MJ1001 VCE=80V; RBE=1.0k@ TC=150 1.0 5.0 MJ1000 VCE=30V; IB=0 VBE ICER ICEO Collector cut-off current Collector cut-off current MJ1001 mA 0.5 mA 2.0 mA VCE=40V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=3A ; VCE=3V 1000 hFE-2 DC current gain IC=4A ; VCE=3V 750 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.94 /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 MJ1000/1001