Inchange Semiconductor Product Specification BDV65/65A/65B/65C Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDV64/64A/64B/64C ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in general purpose amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS BDV65 Collector-base voltage 80 Open emitter VEBO 100 BDV65C 120 BDV65 60 Collector-emitter voltage Emitter-base voltage V BDV65B BDV65A VCEO UNIT 60 BDV65A VCBO VALUE 80 Open base V BDV65B 100 BDV65C 120 Open collector 5 V IC Collector current 12 A ICM Collector current-peak 15 A IB Base current 0.5 A PC Collector power dissipation TC=25℃ 125 Ta=25℃ 3.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BDV65/65A/65B/65C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV65 V(BR)CEO VCEsat VBE Collector-emitter breakdown voltage BDV65A MAX UNIT 80 IC=30mA, IB=0 V BDV65B 100 BDV65C 120 Collector-emitter saturation voltage IC=5A ,IB=20mA 2.0 V Base-emitter on voltage IC=5A ; VCE=4V 2.5 V VCB=60V, IE=0 VCB=30V, IE=0;TC=150℃ VCB=80V, IE=0 VCB=40V, IE=0;TC=150℃ VCB=100V, IE=0 VCB=50V, IE=0;TC=150℃ VCB=120V, IE=0 VCB=60V, IE=0;TC=150℃ 0.4 2.0 Collector cut-off current BDV65A BDV65B BDV65C ICEO TYP. 60 BDV65 ICBO MIN Collector cut-off current BDV65 VCE=30V, IB=0 BDV65A VCE=40V, IB=0 BDV65B VCE=50V, IB=0 BDV65C VCE=60V, IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=5A ; VCE=4V VEC Diode forward voltage IE=10A 0.4 2.0 0.4 2.0 mA 0.4 2.0 2 mA 5 mA 3.5 V 1000 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.0 ℃/W Inchange Semiconductor Product Specification BDV65/65A/65B/65C Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3