ISC BDV65C

Inchange Semiconductor
Product Specification
BDV65/65A/65B/65C
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type BDV64/64A/64B/64C
・DARLINGTON
・High DC current gain
APPLICATIONS
・For use in general purpose amplifier
applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
BDV65
Collector-base voltage
80
Open emitter
VEBO
100
BDV65C
120
BDV65
60
Collector-emitter voltage
Emitter-base voltage
V
BDV65B
BDV65A
VCEO
UNIT
60
BDV65A
VCBO
VALUE
80
Open base
V
BDV65B
100
BDV65C
120
Open collector
5
V
IC
Collector current
12
A
ICM
Collector current-peak
15
A
IB
Base current
0.5
A
PC
Collector power dissipation
TC=25℃
125
Ta=25℃
3.5
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
BDV65/65A/65B/65C
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV65
V(BR)CEO
VCEsat
VBE
Collector-emitter
breakdown voltage
BDV65A
MAX
UNIT
80
IC=30mA, IB=0
V
BDV65B
100
BDV65C
120
Collector-emitter saturation voltage
IC=5A ,IB=20mA
2.0
V
Base-emitter on voltage
IC=5A ; VCE=4V
2.5
V
VCB=60V, IE=0
VCB=30V, IE=0;TC=150℃
VCB=80V, IE=0
VCB=40V, IE=0;TC=150℃
VCB=100V, IE=0
VCB=50V, IE=0;TC=150℃
VCB=120V, IE=0
VCB=60V, IE=0;TC=150℃
0.4
2.0
Collector
cut-off current
BDV65A
BDV65B
BDV65C
ICEO
TYP.
60
BDV65
ICBO
MIN
Collector
cut-off current
BDV65
VCE=30V, IB=0
BDV65A
VCE=40V, IB=0
BDV65B
VCE=50V, IB=0
BDV65C
VCE=60V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
VEC
Diode forward voltage
IE=10A
0.4
2.0
0.4
2.0
mA
0.4
2.0
2
mA
5
mA
3.5
V
1000
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
2
MAX
UNIT
1.0
℃/W
Inchange Semiconductor
Product Specification
BDV65/65A/65B/65C
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
3