SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP100/101/102 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS ·For industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP100 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP101 Open emitter Emitter-base voltage IC 80 TIP102 100 TIP100 60 TIP101 UNIT 60 Open base TIP102 VEBO VALUE 80 V V 100 Open collector 5 V Collector current-DC 8 A ICM Collector current-Pulse 15 A IB Base current-DC 1 A PC Collector power dissipation TC=25 80 Ta=25 2 Tj Junction temperature 150 Tstg Storage temperature -65~150 W SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP100/101/102 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP100 VCEO(SUS) Collector-emitter sustaining voltage TIP101 MIN TYP. MAX UNIT 60 IC=30mA, IB=0 TIP102 V 80 100 VCE(sat)-1 Collector-emitter saturation voltage IC=3A ,IB=6mA 2.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=8A ,IB=80mA 2.5 V Base-emitter on voltage IC=8A ; VCE=4V 2.8 V 50 µA 50 µA 2 mA VBE ICBO ICEO Collector cut-off current Collector cut-off current TIP100 VCB=60V, IE=0 TIP101 VCB=80V, IE=0 TIP102 VCB=100V, IE=0 TIP100 VCE=30V, IB=0 TIP101 VCE=40V, IB=0 TIP102 VCE=50V, IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=3A ; VCE=4V 1000 hFE-2 DC current gain IC=8A ; VCE=4V 200 COB Output capacitance IE=0 ; VCB=10V,f=0.1MHz 2 20000 200 pF SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.1mm) 3 TIP100/101/102