Inchange Semiconductor Product Specification BDX53/A/B/C Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON ・Complement to type BDX54/A/B/C APPLICATIONS ・Power linear and switching applications ・Hammer drivers,audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 Absolute maximum ratings(Ta=25℃) SYMBOL 固 VCBO PARAMETER CONDITIONS BDX53 Open emitter BDX53B VCEO N A H INC BDX53C BDX53 BDX53A Collector-emitter voltage VEBO Emitter-base voltage IC DUC ICON BDX53A M E S GE Collector-base voltage TOR VALUE UNIT 45 60 V 80 100 45 60 Open base V BDX53B 80 BDX53C 100 Open collector 5 V Collector current-DC 8 A ICM Collector current-Pulse 12 A IB Base current 0.2 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 2.08 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BDX53/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX53 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 45 BDX53A 60 IC=0.1A, IB=0 V BDX53B 80 BDX53C 100 VCEsat Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V VBE sat Base-emitter saturation voltage IC=3A ,IB=12mA 2.5 V 0.2 mA ICBO BDX53 VCB=45V, IE=0 BDX53A VCB=60V, IE=0 BDX53B VCB=80V, IE=0 Collector cut-off current 体 半导 固电 ICEO BDX53C VCB=100V, IE=0 BDX53 VCE=22V, IB=0 BDX53A VCE=30V, IB=0 G N A CH IN D N O IC M E S E Collector cut-off current R O T UC BDX53B VCE=40V, IB=0 BDX53C VCE=50V, IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=3A ; VCE=3V VF-1 Forward diode voltage IF=3A 1.8 VF-2 Forward diode voltage IF=8A 2.5 2 0.5 mA 2.0 mA 2.5 V 750 V Inchange Semiconductor Product Specification BDX53/A/B/C Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3