SavantIC Semiconductor Product Specification BDX65C Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·DARLINGTON ·Complement to type BDX64C APPLICATIONS ·Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current(peak) 16 A IB Base current 0.2 A PT Total power dissipation 117 W Tj Junction temperature -55~200 Tstg Storage temperature -55~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification BDX65C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0;L=25mH VCEsat Collector-emitter saturation voltage IC=5A ;IB=20mA 2 V VBE Base-emitter voltage IC=5A;VCE=3V 3 V ICBO Collector cut-off current VCB=120V; IE=0 TC=150 0.4 3 mA ICEO Collector cut-off current VCE=60V; IB=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA VF Diode forward voltage IF=3A hFE-1 DC current gain IC=1A ; VCE=3V hFE-2 DC current gain IC=5A ; VCE=3V hFE-3 DC current gain IC=10A ; VCE=3V 1500 Transition frequency IC=5A ; VCE=3V 7 fT CONDITIONS MIN TYP. 120 UNIT V 1.8 2 MAX V 1500 1000 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDX65C