SavantIC Semiconductor Product Specification BD708 BD710 BD712 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD707/709/711 APPLICATIONS ·Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BD708 VCBO VCEO Collector-base voltage Collector-emitter voltage BD710 Open emitter Emitter-base voltage IC -80 BD712 -100 BD708 -60 BD710 UNIT -60 Open base BD712 VEBO VALUE -80 V V -100 Open collector -5 V Collector current-DC -12 A ICM Collector current-Pulse -18 A IB Base current -5 A PT Total dissipation 75 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 1.67 /W SavantIC Semiconductor Product Specification BD708 BD710 BD712 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD708 VCEO(SUS) Collector-emitter sustaining voltage BD710 VBE ICBO ICEO IC=-0.1A, IB=0 UNIT V -100 Collector-emitter saturation voltage IC=-4A ,IB=-0.4A -1.0 V Base-emitter voltage IC=-4A , VCE=-4V -1.5 V BD708 VCB=-60V, IE=0 TC=150 -0.1 -1.0 BD710 VCB=-80V, IE=0 TC=150 -0.1 -1.0 BD712 VCB=-100V, IE=0 TC=150 -0.1 -1.0 BD708 VCE=-30V, IB=0 BD710 VCE=-40V, IB=0 BD712 VCE=-50V, IB=0 Collector cut-off current Collector cut-off current Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.5A ; VCE=-2V 40 hFE-2 DC current gain only for BD708 IC=-2A ; VCE=-2V 30 hFE-3 DC current gain IC=-4A ; VCE=-4V 15 BD708 DC current gain BD710 5 IC=-10A ; VCE=-4V Transition frequency 120 mA -0.1 mA -1.0 mA 400 150 10 8 BD712 fT MAX -80 IEBO hFE-4 TYP. -60 BD712 VCEsat MIN 8 IC=-0.3A;VCE=-3V; 2 3 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD708 BD710 BD712