SavantIC Semiconductor Product Specification BDX88C Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type BDX87C ·DARLINGTON APPLICATIONS ·Designed for use in power linear and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A ICM Collector current(peak) -18 A IB Base current -0.2 A PT Total power dissipation 120 W Tj Max. operating Junction temperature Tstg TC=25 Storage temperature 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.45 /W SavantIC Semiconductor Product Specification BDX88C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-6A ;IB=-24mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-12A ;IB=-120mA -3.0 V Base-emitter saturation voltage IC=-12A ;IB=-120mA -4.0 V VBE Base-emitter on voltage IC=-6A ; VCE=-3V -2.8 V hFE-1 DC current gain IC=-5A ; VCE=-3V 1000 hFE-2 DC current gain IC=-6A ; VCE=-3V 750 hFE-3 DC current gain IC=-12A ; VCE=-3V 100 ICBO Collector cut-off current VCB=-100V; IE=0 TC=150 -0.5 -5.0 mA ICEO Collector cut-off current VCE=-50V; IB=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA VF-1 Diode forward voltage IF=-3A -1.8 V VF-2 Diode forward voltage IF=-8A VBEsat CONDITIONS MIN TYP. -100 UNIT V 18000 -2.5 2 MAX V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDX88C