SAVANTIC 2N6299

SavantIC Semiconductor
Product Specification
2N6298 2N6299
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·DARLINGTON
·Low collector saturation voltage
·Complement to type 2N6300/6301
APPLICATIONS
·General purpose power amplifier and
low frequency switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
2N6298
Open emitter
2N6299
2N6298
VALUE
-60
UNIT
V
-80
Open base
2N6299
-60
V
-80
Open collector
-5
V
IC
Collector current
-8
A
ICM
Collector current-peak
-16
A
IB
Base current
-0.12
A
PT
Total power dissipation
75
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
MAX
UNIT
2.33
/W
SavantIC Semiconductor
Product Specification
2N6298 2N6299
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
2N6298
MIN
TYP.
MAX
UNIT
-60
V
IC=-0.1A ; IB=0
-80
2N6299
VCEsat-1
Collector-emitter saturation voltage
IC=-4A; IB=-16mA
-2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-8A; IB=-80mA
-3.0
V
Base-emitter saturation voltage
IC=-8A; IB=-80mA
-4.0
V
Base -emitter on voltage
IC=-4A ; VCE=-3V
-2.8
V
2N6298
VCE=-60V; VBE(off)=-1.5V
TC=150
-0.5
-5.0
2N6299
VCE=-80V; VBE(off)=-1.5V
TC=150
-0.5
-5.0
2N6298
VCE=-30V; IB=0
VBEsat
VBE
ICEX
ICEO
Collector cut-off current
Collector cut-off current
2N6299
mA
-0.5
mA
-2.0
mA
VCE=-40V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-4A ; VCE=-3V
750
hFE-2
DC current gain
IC=-8A ; VCE=-3V
100
COB
Output capacitance
IE=0 ; VCB=-10V;f=0.1MHz
2
18000
300
pF
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2N6298 2N6299