SavantIC Semiconductor Product Specification 2N6298 2N6299 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6300/6301 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS 2N6298 Open emitter 2N6299 2N6298 VALUE -60 UNIT V -80 Open base 2N6299 -60 V -80 Open collector -5 V IC Collector current -8 A ICM Collector current-peak -16 A IB Base current -0.12 A PT Total power dissipation 75 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX UNIT 2.33 /W SavantIC Semiconductor Product Specification 2N6298 2N6299 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N6298 MIN TYP. MAX UNIT -60 V IC=-0.1A ; IB=0 -80 2N6299 VCEsat-1 Collector-emitter saturation voltage IC=-4A; IB=-16mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-8A; IB=-80mA -3.0 V Base-emitter saturation voltage IC=-8A; IB=-80mA -4.0 V Base -emitter on voltage IC=-4A ; VCE=-3V -2.8 V 2N6298 VCE=-60V; VBE(off)=-1.5V TC=150 -0.5 -5.0 2N6299 VCE=-80V; VBE(off)=-1.5V TC=150 -0.5 -5.0 2N6298 VCE=-30V; IB=0 VBEsat VBE ICEX ICEO Collector cut-off current Collector cut-off current 2N6299 mA -0.5 mA -2.0 mA VCE=-40V; IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-4A ; VCE=-3V 750 hFE-2 DC current gain IC=-8A ; VCE=-3V 100 COB Output capacitance IE=0 ; VCB=-10V;f=0.1MHz 2 18000 300 pF SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N6298 2N6299