SAVANTIC BU408

SavantIC Semiconductor
Product Specification
BU408
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High voltage
·Fast switching speed
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
400
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
7
A
ICM
Collector current (Pulse)
10
A
IB
Base current
4
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55-150
TC=25
SavantIC Semiconductor
Product Specification
BU408
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
1.5
V
hFE
DC current gain
IC=2A ; VCE=5V
ICES
Collector cut-off current
VCE=250V; VBE=0
TC=150
0.1
1.0
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1
mA
fT
Transition frequency
IC=0.5A ; VCE=10V
toff
Turn-off time
IC=6A ; IB=1.2A
2
MIN
TYP.
MAX
200
UNIT
V
40
10
MHz
0.4
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
BU408