SavantIC Semiconductor Product Specification 2SC3591 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICM Collector current-peak 12 A IB Base current 4 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3591 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; RBE=; 200 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.8 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=250V ;IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE-1 DC current gain IC=1 A ; VCE=1V 15 hFE -2 DC current gain IC=5 A ; VCE=1V 10 fT Transition frequency IC=0.5 A ; VCE=10V 10 tf Fall time VCC=50V;IC=5A; IB1=-IB2=0.5A ;RL=10A 2 MIN TYP. MAX UNIT 50 MHz 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3591 SavantIC Semiconductor Product Specification 2SC3591 Silicon NPN Power Transistors 4