SAVANTIC BU508DF

SavantIC Semiconductor
Product Specification
BU508DF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection
circuits of colour TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
8
A
ICP
Collector current (Pulse)
15
A
IB
Base current (DC)
4
A
IBM
Base current (Pulse)
6
A
Ptot
Total power dissipation
34
W
Tj
Tstg
Max.operating junction temperature
Storage temperature
TC=25
150
-65~150
SavantIC Semiconductor
Product Specification
BU508DF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
VCE(sat)
Collector-emitter saturation voltage
IC=4.5A; IB=1.6A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4.5A ;IB=2A
1.1
V
IEBO
Emitter cut-off current
VEB=5V; IC=0
300
mA
ICES
Collector cut-off current
VCB=BVCBO IE=0
TC=125
1.0
2.0
mA
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=5V
COB
Output capacitance
Diode forward voltage
VF
700
UNIT
V
10
30
7
MHz
IE=0 ; VCB=10V;f=1MHz
125
pF
IF=4.5A
1.6
2
2.0
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
BU508DF