SavantIC Semiconductor Product Specification BU526 BU526A Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in power supply units of TV receives. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter BU526 UNIT 900 V 400 Open base BU526A VEBO VALUE Emitter-base voltage V 460 Open collector 7 V IC Collector current 8 A ICM Collector current-peak 10 A PT Total power dissipation 86 W Tj Junction temperature 175 Tstg Storage temperature -65~175 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.04 /W SavantIC Semiconductor Product Specification BU526 BU526A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS BU526 MIN TYP. MAX UNIT 400 V IC=50mA; IB=0; 460 BU526A V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0; VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=1 A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8A;IB=3 A 5.0 V Base-emitter saturation voltage IC=5A;IB=1 A 1.6 V ICBO Collector cut-off current VCB=900V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V;IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V VBEsat 2 7 15 V 45 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU526 BU526A