Inchange Semiconductor Product Specification BU626A Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Short switching times. ・High dielectric strength. APPLICATIONS ・For use in power supply units of TV receives. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PT Total power dissipation 100 W Tj Junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ MAX UNIT 1.5 K/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BU626A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0; 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=8A;IB=2.5 A 3.3 V VBEsat Base-emitter saturation voltage IC=8A;IB=2.5 A 2.2 V ICES Collector cut-off current VCE=1000V;VBE=0 1.0 mA hFE-1 DC current gain IC=10A ; VCE=1.5V 10 hFE-2 DC current gain IC=2.5A ; VCE=10V 15 fT Transition frequency IC=0.1A ; VCE=10V tf Fall time IC=8A;IB1=-IB2=2.5A; 2 MIN TYP. MAX 6 UNIT MHz 1 μs Inchange Semiconductor Product Specification BU626A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3