ISC BU626A

Inchange Semiconductor
Product Specification
BU626A
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Short switching times.
・High dielectric strength.
APPLICATIONS
・For use in power supply units of TV receives.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PT
Total power dissipation
100
W
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-65~175
℃
MAX
UNIT
1.5
K/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BU626A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; IB=0;
400
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0;
7
V
VCEsat
Collector-emitter saturation voltage
IC=8A;IB=2.5 A
3.3
V
VBEsat
Base-emitter saturation voltage
IC=8A;IB=2.5 A
2.2
V
ICES
Collector cut-off current
VCE=1000V;VBE=0
1.0
mA
hFE-1
DC current gain
IC=10A ; VCE=1.5V
10
hFE-2
DC current gain
IC=2.5A ; VCE=10V
15
fT
Transition frequency
IC=0.1A ; VCE=10V
tf
Fall time
IC=8A;IB1=-IB2=2.5A;
2
MIN
TYP.
MAX
6
UNIT
MHz
1
μs
Inchange Semiconductor
Product Specification
BU626A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3