Inchange Semiconductor Product Specification BU526 BU526A Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Short switching times. ・High dielectric strength. APPLICATIONS ・For use in power supply units of TV receives. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter BU526 UNIT 900 V 400 Open base BU526A VEBO VALUE Emitter-base voltage V 460 Open collector 7 V IC Collector current 8 A ICM Collector current-peak 10 A PT Total power dissipation 86 W Tj Junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ MAX UNIT 1.04 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BU526 BU526A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BU526 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 400 IC=50mA; IB=0; BU526A V 460 V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0; VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=1 A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8A;IB=3 A 5.0 V Base-emitter saturation voltage IC=5A;IB=1 A 1.6 V ICBO Collector cut-off current VCB=900V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V;IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V VBEsat 2 7 15 V 45 Inchange Semiconductor Product Specification BU526 BU526A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3