SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP140/141/142 DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP145/146/147 APPLICATIONS ·Designed for general–purpose amplifier and low frequency switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP140 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP141 Open emitter Emitter-base voltage IC 80 TIP142 100 TIP140 60 TIP141 UNIT 60 Open base TIP142 VEBO VALUE 80 V V 100 Open collector 5 V Collector current-DC 10 A ICM Collector current-Pulse 15 A IB Base current-DC 0.5 A PC Collector power dissipation 125 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.0 /W Rth j-A Thermal resistance case to ambient 35.7 /W SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP140/141/142 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP140 VCEO(SUS) Collector-emitter sustaining voltage TIP141 MIN TYP. MAX UNIT 60 IC=30mA, IB=0 TIP142 V 80 100 VCE(sat)-1 Collector-emitter saturation voltage IC=5A ,IB=10mA 2.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=10A ,IB=40mA 3.0 V Base-emitter saturation voltage IC=10A ,IB=40mA 3.5 V Base-emitter on voltage IC=10A ; VCE=4V 3.0 V 1 mA 2 mA 2 mA VBE(sat) VBE ICBO ICEO Collector cut-off current Collector cut-off current TIP140 VCB=60V, IE=0 TIP141 VCB=80V, IE=0 TIP142 VCB=100V, IE=0 TIP140 VCE=30V, IB=0 TIP141 VCE=40V, IB=0 TIP142 VCE=50V, IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=5A ; VCE=4V 1000 hFE-2 DC current gain IC=10A ; VCE=4V 500 Switching times td Delay time tr Rise time tstg tf Storage time VCC = 30 V, IC = 5.0 A, IB =20 mA; Duty CycleE20% IB1 = IB2, RC & RB Varied, TJ = 25 Fall time 2 0.15 µs 0.55 µs 2.5 µs 2.5 µs SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3 TIP140/141/142 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 4 TIP140/141/142