SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP120/121/122 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP125/126/127 APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS (Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP120 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP121 Open emitter Emitter-base voltage IC 80 TIP122 100 TIP120 60 TIP121 UNIT 60 Open base TIP122 VEBO VALUE 80 V V 100 Open collector 5 V Collector current-DC 5 A ICM Collector current-Pulse 8 A IB Base current-DC 120 mA PC Collector power dissipation TC=25 65 Ta=25 2 Tj Junction temperature 150 Tstg Storage temperature -65~150 W SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP120/121/122 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP120 VCEO(SUS) Collector-emitter sustaining voltage TIP121 MIN TYP. MAX UNIT 60 IC=0.1A, IB=0 TIP122 V 80 100 VCE(sat)-1 Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=5A ,IB=20mA 4.0 V Base-emitter on voltage IC=3.0A ; VCE=3V 2.5 V 0.2 mA 0.5 mA 2 mA 200 pF VBE ICBO ICEO Collector cut-off current Collector cut-off current TIP120 VCB=60V, IE=0 TIP121 VCB=80V, IE=0 TIP122 VCB=100V, IE=0 TIP120 VCE=30V, IB=0 TIP121 VCE=40V, IB=0 TIP122 VCE=50V, IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.5A ; VCE=3V 1000 hFE-2 DC current gain IC=3.0A ; VCE=3V 1000 Cob Output capacitance IE=0 ; VCB=10V,f=0.1MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 TIP120/121/122 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 4 TIP120/121/122