SavantIC Semiconductor Product Specification 2N6594 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N6569 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -45 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A ICM Collector current-peak -24 A IB Base current -5 A IE Emitter current -17 A IEM Emitter current-peak -34 A PC Collector power dissipation 100 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 SavantIC Semiconductor Product Specification 2N6594 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-12A; IB=-2.4A -4.0 V Base-emitter saturation voltage IC=-4A; IB=-0.4A -2.0 V ICEO Collector cut-off current VCE=-40V; IB=0 -1.0 mA ICBO Collector cut-off current VCB=-45V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5.0 mA hFE-1 DC current gain IC=-4A ; VCE=-3V 15 200 hFE-2 DC current gain IC=-12A ; VCE=-4V 5 100 Transition frequency IC=-1.0A ; VCE=-4V;f=0.5MHz 1.5 20 MHz 0.4 µs 1.5 µs 5.0 µs 1.5 µs VBEsat fT -40 UNIT V Switching times td Delay time tr Rise time tstg tf IC=-2A; IB1=-IB2=-0.2A VCC=-30V; tp=25µs; Duty CycleA2.0% Storage time Fall time THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 2 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2N6594