SAVANTIC 2N6594

SavantIC Semiconductor
Product Specification
2N6594
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2N6569
·Wide area of safe operation
APPLICATIONS
·Designed for low voltage amplifier
power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-45
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-12
A
ICM
Collector current-peak
-24
A
IB
Base current
-5
A
IE
Emitter current
-17
A
IEM
Emitter current-peak
-34
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
SavantIC Semiconductor
Product Specification
2N6594
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.1A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-12A; IB=-2.4A
-4.0
V
Base-emitter saturation voltage
IC=-4A; IB=-0.4A
-2.0
V
ICEO
Collector cut-off current
VCE=-40V; IB=0
-1.0
mA
ICBO
Collector cut-off current
VCB=-45V; IE=0
-1.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5.0
mA
hFE-1
DC current gain
IC=-4A ; VCE=-3V
15
200
hFE-2
DC current gain
IC=-12A ; VCE=-4V
5
100
Transition frequency
IC=-1.0A ; VCE=-4V;f=0.5MHz
1.5
20
MHz
0.4
µs
1.5
µs
5.0
µs
1.5
µs
VBEsat
fT
-40
UNIT
V
Switching times
td
Delay time
tr
Rise time
tstg
tf
IC=-2A; IB1=-IB2=-0.2A
VCC=-30V; tp=25µs;
Duty CycleA2.0%
Storage time
Fall time
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.75
2
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2N6594