SavantIC Semiconductor Product Specification TIP41D/41E/41F Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP42D/42E/42F APPLICATIONS ·For medium power linear switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP41D VCBO VCEO Collector-base voltage Collector-emitter voltage TIP41E Open emitter Emitter-base voltage IC 180 TIP41F 200 TIP41D 120 TIP41E UNIT 160 Open base TIP41F VEBO VALUE 140 V V 160 Open collector 5 V Collector current (DC) 6 A ICM Collector current-Pulse 10 A IB Base current 3 A PC Collector power dissipation TC=25 65 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification TIP41D/41E/41F Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP41D VCEO(SUS) Collector-emitter sustaining voltage TIP41E VBE ICES ICEO IC=30mA; IB=0 MAX UNIT V 140 160 Collector-emitter saturation voltage IC=6A; IB=1.5A 1.5 V Base-emitter on voltage IC=6A ; VCE=4V 2.0 V 0.4 mA VCE=90V; IB=0 0.7 mA 1.0 mA Collector cut-off current Collector cut-off current TIP41D VCE=120V; VEB=0 TIP41E VCE=140V; VEB=0 TIP41F VCE=160V; VEB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.3A ; VCE=4V 30 hFE-2 DC current gain IC=3A ; VCE=4V 15 Transition frequency IC=0.5A ; VCE=10V 3 fT TYP. 120 TIP41F VCE(sat) MIN 2 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.1mm) 3 TIP41D/41E/41F