SavantIC Semiconductor Product Specification TIP47/48/49/50 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High sustaining voltage : VCEO(sus) = 250~400V ·1A rated collector current APPLICATIONS ·High voltage and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP47 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP48 TIP49 Open emitter Emitter-base voltage IC 400 450 TIP50 500 TIP47 250 TIP48 TIP49 UNIT 350 Open base TIP50 VEBO VALUE 300 350 V V 400 Open collector 5 V Collector current (DC) 1 A ICM Collector current-Pulse 2 A IB Base current 0.6 A PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 40 Ta=25 2 W SavantIC Semiconductor Product Specification TIP47/48/49/50 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP47 VCEO(SUS) VCE(sat) VBE ICEX ICEO Collector-emitter sustaining voltage MIN MAX UNIT 250 TIP48 300 IC=30mA; IB=0 V TIP49 350 TIP50 400 Collector-emitter saturation voltage IC=1A ;IB=0.2A 1.0 V Base-emitter on voltage IC=1A ; VCE=10V 1.5 V 1 mA 1 mA 1 mA TIP47 VCE=350V; VBE=0 TIP48 VCE=400V; VBE=0 TIP49 VCE=450V; VBE=0 TIP50 VCE=500V; VBE=0 TIP47 VCE=150V; IB=0 TIP48 VCE=200V; IB=0 TIP49 VCE=250V; IB=0 TIP50 VCE=300V; IB=0 Collector cut-off current Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.3A ; VCE=10V 30 hFE-2 DC current gain IC=1A ; VCE=10V 10 Transition frequency IC=0.2A ; VCE=10V 10 fT TYP. 150 MHz Switching times ton tstg tf Turn-on time Storage time 0.5 VCC=400V; 5IB1 = -2.5IB2 = IC = 6A RL = 66.7C Fall time 3.0 0.3 2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 TIP47/48/49/50 SavantIC Semiconductor Product Specification TIP47/48/49/50 Silicon NPN Power Transistors 4