SavantIC Semiconductor Product Specification 2SC3528 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High collector current ·Low saturation voltage APPLICATIONS ·For high voltatge ,high speed power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 20 A ICP Collector current-peak 30 A IB Base current 6 A PC Collector power dissipation TC=25 125 Ta=25 3 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3528 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=25mH VCE(sat) Collector-emitter saturation voltage IC=10A; IB=2A 1.0 V VBE(sat) Base-emitter saturation voltage IC=10A; IB=2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=2A ; VCE=5V 15 hFE-2 DC current gain IC=10A ; VCE=5V 10 Transition frequency IC=1A ; VCE=10V;f=1.0MHz fT CONDITIONS MIN TYP. MAX 400 UNIT V 15 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=10A; IB1=-IB2=2.0A VCC=125V 2 1.0 µs 2.5 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC3528