SAVANTIC 2SC3285

SavantIC Semiconductor
Product Specification
2SC3285
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High speed switching
·Good linearity of hFE
·High VCBO
APPLICATIONS
·For high speed switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
ICP
Collector current-peak
6
A
IB
Base current
2
A
PC
Collector power dissipation
TC=25
70
Ta=25
2.5
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC3285
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.5A ; IE=0
VCE(sat)
Collector-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
VBE(sat)
Base-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=1000V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
50
µA
hFE
DC current gain
IC=2A ; VCE=5V
Transition frequency
IC=0.2A ; VCE=5V
fT
800
UNIT
V
6
4
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A; IB1=0.4A;IB2=-0.8A
VCC=250V
2
1.0
µs
2.5
µs
0.5
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC3285