2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 ƔFEATURES . Power Dissipation PCM: 0.2 W ( Ta = 25 к ) A . Collector Current L ICM: -0.15 A 3 . Collector-Base Voltage 3 B S Top View V(BR)CBO: -50 V 1 1 2 V 2 G 1.BASE 2.EMITTER C 3.COLLECTOR H D J K Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ƔABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25к) TYPE NUMBER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE (sat) VBE(sat) Transition Frequency Operating and Storage Junction Temperature Range fT TJ, TSTG TEST CONDITIONS IC = -100 µA, IE = 0 A IC = -0.1 mA, IB = 0 A IE = -10 µA, IC = 0 A VCB = -50 V, IE = 0 A VCE = -50 V, IB = 0 A VEB = -5 V, IC = 0 A VCE = -6 V, IC = -2 mA IC = -100 mA, IB = -10 mA IC = -100 mA, IB = -10 mA VCE = 10 V, IC = 1 mA, f = 30 MHz - Min. -50 -50 -5 130 - Typ. - Max. -0.1 -0.1 -0.1 400 -0.3 -1.1 UNIT V V V µA µA µA 80 - - MHz - 55 ~ +150 V V к ƔhFE VALUES ARE CLASSIFIED AS FOLLOWS: Rank hFE L 130 ~ 200 H 200 ~ 400 Marking: BA http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 2SC1015K Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A PNP Type Plastic Encapsulate Transistors Any changing of specification will not be informed individual Page 2 of 2