S9018 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 1 PCM : 0.2 W Collector Current ICM : 0.05 A Collector-base voltage 2 Base 2 A Emitter L V(BR)CBO : 25 V 3 Tj, Tstg : - 55 C ~ + 150 C O B S Top View Operating & storage junction temperature 1 2 O V G All Dimension in mm C H D ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol J K unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA Collector cut-off current ICEO VCE=15V, IB=0 0.1 µA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 µA DC current gain hFE(1) VCE=5V, IC= 1mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB= 1mA 1.4 V fT Transition frequency DEVICE MARKING http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B VCE=5V, IC= 5mA f=400MHz 70 600 190 MHz S9018 = J8 Any changing of specification will not be informed individual Page 1 of 1