BFS20 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free FEATURES Collector 3 3 High Fequency Application. 1 VHF Band Amplifier application SOT-23 1 2 RoHS Compliant Product Dim Min Max Base Power dissipation 2 A Emitter L PCM : 0.25 W 3 Collector Current B S Top View 1 2 ICM : 25mA V Collector-base voltage G V(BR)CBO : 30 V C Operating & storage junction temperature O H D 2.800 3.040 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm J K A B O Tj, Tstg : - 55 C ~ + 150 C ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO Ic= 100µA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA Collector cut-off current ICEO VCE=15V, IB=0 0.1 µA Collector cut-off current IEBO VEB=4V, IC=0 0.1 µA DC current gain hFE VCE=10V, IC= 7mA Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1mA 0.3 V Base-emitter voltage VBE(on) IC=7mA, VCE=10V 0.9 V Transition frequency fT Marking http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A VCE= 10V, IC=5mA f = 100MHz 40 275 120 MHz G11 Any changing of specification will not be informed individual Page 1 of 1