S9012 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 1 2 PCM : 0.3 W Collector Current ICM : - 0.5 A Collector-base voltage V(BR)CBO : - 40 V Base 2 A Emitter L 3 O B S Top View Operating & storage junction temperature 1 2 O Tj, Tstg : - 55 C ~ + 150 C V G H 0.370 0.500 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm C D D G J K ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) O Parameter Symbol Test conditions MIN TYP MAX UNIT -40 V Ic= -1mA， IB=0 -25 V IE= -100μA， IC=0 -5 V Collector-base breakdown voltage V(BR)CBO Ic= -100μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=0 Collector cut-off current ICBO VCB= - 40V , IE=0 -0.1 μA Collector cut-off current ICEO VCE= - 20V , IB=0 -0.1 μA Emitter cut-off current IEBO VEB= - 5V , - 0.1 μA HFE(1) VCE= -1V , IC=- 50 mA 120 HFE(2) VCE= -1V , IC= -500mA 40 Collector-emitter saturation voltage VCE(sat) IC= -500 mA, IB=- 50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC= -500 mA, IB=- 50m A -1.2 V IC=0 400 DC current gain VCE= - 6V, IC= - 20mA fT Transition frequency MHz 150 f=30MHz CLASSIFICATION OF hFE(1) Rank Range DEVICE MARKING http://www.SeCoSGmbH.com 17-Dec-2007 Rev.B L H J 120-200 200-350 300-400 S9012=2T1 Any changing of specification will not be informed individual Page 1 of 1