BAT54 Series BAT54 / BAT54A / BAT54C / BAT54S Elektronische Bauelemente Surface Mount Schottky Barrier Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 n Low Turn-on Voltage n Fast Switching n PN Junction Guard Ring for Transient and ESD Protection A L Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 3 B S Top View 1 2 MECHANICAL DATA n n V G Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 n Polarity: See Diagrams Below n Weight: 0.008 grams (approx.) n Mounting Position: Any C H D J K L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm 3 1 3 3 1 2 BAT54 Marking: LV3,KL1 1 2 BAT54A Marking: B6,KL2 3 2 1 BAT54C Marking: B5,KL3 2 BAT54S Marking: LD3,KL4 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C Forward Current (DC) IF 200 Max mA TJ 125 Max °C Tstg – 55 to +150 °C Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR)R 30 — — Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — 7.6 10 pF Reverse Leakage (VR = 25 V) IR — 0.5 2.0 µAdc Forward Voltage (IF = 0.1 mAdc) VF — 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF — 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF — 0.52 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr — — 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF — 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF — 0.35 0.40 Vdc Reverse Breakdown Voltage (IR = 10 µA) Forward Current (DC) IF — — 200 mAdc Repetitive Peak Forward Current IFRM — — 300 mAdc Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 BAT54 Series BAT54 / BAT54A / BAT54C / BAT54S Elektronische Bauelemente Surface Mount Schottky Barrier Diode 820 Ω +10 V 2k 0.1 µF tr IF 100 µH 0.1 µF tp IF t trr 10% t DUT 50 Ω Οutput Pulse Generator 50 Ω Input Sampling Oscilloscope 90% IR(REC) = 1 mA IR VR Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) Input Signal Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150°C IR , Reverse Current (µA) IF, Forward Current (mA) 100 1 50°C 10 1 25°C 1.0 85°C 25°C 0.1 0.0 – 40°C TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 – 55°C TA = 25°C 0.001 0.1 0.2 0.3 0.4 0.5 0 0.6 5 V F, Forward Voltage (V) Figure 2. Forward Voltage 10 15 20 VR, Reverse Voltage (V) 25 30 Figure 3. Leakage Current 14 C T , Total Capacitance (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 VR, Reverse Voltage (V) Figure 4. Total Capacitance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2