BAV99BRW Quad Chips Surface Mount Switching Diode Array Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES · · · · SOT-363 Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion .055(1.40) .047(1.20) For General Purpose Switching Applications o .026TYP (0.65TYP) 8 o 0 .021REF (0.525)REF High Conductance .053(1.35) .045(1.15) .096(2.45) .085(2.15) .018(0.46) .010(0.26) TOP VIEW .014(0.35) .006(0.15) MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current .087(2.20) .079(2.00) Symbol Value Unit VR 75 Vdc IF 150 mAdc IFM(surge) 400 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 200 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 250 mW 2.4 mW/°C 417 °C/W – 55 to +150 °C Peak Forward Surge Current .006(0.15) .003(0.08) .004(0.10) .000(0.00) .043(1.10) .035(0.90) .039(1.00) .035(0.90) Dimensions in inches and (millimeters) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature RqJA TJ, Tstg DEVICE MARKING BAV99BRW= KGJ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 75 — Vdc — — — 30 2.5 50 — 2 — — — — 715 855 1000 1250 — 4.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω trr 1. FR– 5 = 1.0 X 0.75 X 0.062 in. http://www.SeCoSGmbH.com 09-Apr-2007 Rev. A µAdc pF mVdc ns 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Any changing of specification will not be informed individual Page 1 of 2 BAV99BRW Dual Series Chips Surface Mount Switching Diode Elektronische Bauelemente 820 Ω +10 V 2.0 k 100 µH IF tp tr 0.1 µF IF t trr 10% t 0.1 µF 90% DUT 50 Ω Input Sampling Oscilloscopes 50 Ω Output Pulse Generator IR VR Input Signal IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 TA = 150°C TA = 85°C TA = 125°C 1.0 IR , Reverse Current (µA) IF, Forward Current (mA) (mA) 100 10 TA = – 40°C 1.0 TA = 25°C TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 0 1.2 10 Figure 2. Forward Voltage 20 30 VR, Reverse Voltage (V) 40 50 Figure 3. Leakage Current CD, Diode Capacitance (pF) 0.68 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, Reverse Voltage (V) Figure 4. Capacitance http://www.SeCoSGmbH.com 09-Apr-2007 Rev. A Any changing of specification will not be informed individual Page 2 of 2