BAT54TW / BAT54ADW /BAT54CDW BAT54SDW/ BAT54BRW Elektronische Bauelemente Surface Mount Schottky Barrier Diode Array RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES · · · SOT-363 Low Turn-on Voltage A Fast Switching PN Junction Guard Ring for Transient and ESD Protection B C MECHANICAL DATA · · · · · H Case: SOT-363, Molded Plastic K Terminals: Solderable per MIL-STD-202, Method 208 J Polarity: See Diagrams Below Weight: 0.016 grams (approx.) D L F 4 Mounting Position: Any 5 6 O 1 BAT54TW Marking: KLA M BAT54ADW Marking: KL6 2 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 0.40 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm 3 BAT54CDW Marking: KL7 BAT54SDW Marking: KL8 BAT54BRW Marking:KLB MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C Forward Current (DC) IF 200 Max mA TJ 125 Max °C Tstg – 55 to +150 °C Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR)R 30 — — Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — 7.6 10 pF Reverse Leakage (VR = 25 V) IR — 0.5 2.0 µAdc Forward Voltage (IF = 0.1 mAdc) VF — 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF — 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF — 0.52 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr — — 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF — 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF — 0.35 0.40 Vdc Reverse Breakdown Voltage (IR = 10 µA) Forward Current (DC) IF — — 200 mAdc Repetitive Peak Forward Current IFRM — — 300 mAdc Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 BAT54TW / BAT54ADW /BAT54CDW BAT54SDW/ BAT54BRW Elektronische Bauelemente Surface Mount Schottky Barrier Diode Array 820 Ω +10 V 2k 0.1 µF tr IF 100 µH 0.1 µF tp IF t trr 10% t DUT 50 Ω Οutput Pulse Generator 50 Ω Input Sampling Oscilloscope 90% IR(REC) = 1 mA IR VR Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) Input Signal Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150°C IR , Reverse Current (µA) IF, Forward Current (mA) 100 1 50°C 10 1 25°C 1.0 85°C 25°C 0.1 0.0 – 40°C TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 – 55°C TA = 25°C 0.001 0.1 0.2 0.3 0.4 0.5 0 0.6 5 V F, Forward Voltage (V) Figure 2. Forward Voltage 10 15 20 VR, Reverse Voltage (V) 25 30 Figure 3. Leakage Current 14 C T , Total Capacitance (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 VR, Reverse Voltage (V) Figure 4. Total Capacitance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2