BAS16 Surface Mount Switching Diode Elektronische Bauelemente RoHS Compliant Product FEATURES · · · · A A suffix of "-C" specifies halogen & lead-free L Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion 3 B S Top View 1 For General Purpose Switching Applications 2 High Conductance V G 3 3 1 CATHODE ANODE C 1 2 H D J K MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current SOT-23 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1.8 mW/°C RqJA 556 °C/W PD 300 RqJA TJ, Tstg mW Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 2.4 mW/°C S 2.100 2.500 417 °C/W V 0.450 0.600 – 55 to +150 All Dimension in mm °C DEVICE MARKING BAS16 = A6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max — — — 1.0 50 30 75 — — — — — 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) µAdc IR V(BR) Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD — 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR — 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 Ω) trr — 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω) QS — 45 pC 1.FR–5 = 1.0 X 0.75 X 0.062 in. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A mV 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Any changing of specification will not be informed individual Page 1 of 2 BAS16 Surface Mount Switching Diode Elektronische Bauelemente 820 Ω +10 V 2.0 k tr 0.1 µF 100 µH tp IF IF t trr 10% t 0.1 µF 90% DUT 50 Ω Input Sampling Oscilloscopes 50 Ω Output Pulse Generator IR(REC) = 1.0 mA IR VR Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) Input Signal Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 100 TA = 85°C TA = 125°C 1.0 IR , Reverse Current (µA) IF, Forward Current (mA) (mA) TA = 150°C 10 TA = – 40°C 1.0 TA = 25°C TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 10 0 1.2 Figure 2. Forward Voltage 20 30 VR, Reverse Voltage (V) 40 50 Figure 3. Leakage Current CD, Diode Capacitance (pF) 0.68 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, Reverse Voltage (V) Figure 4. Capacitance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2