SECOS BAT54CT

BAT54T Series
BAT54T / BAT54AT / BAT54CT / BAT54ST
Elektronische Bauelemente
Surface Mount Schottky Barrier Diode
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
·
·
·
SOT-523
A
L
Ultra-Small Surface Mount Package
Fast Switching
B S
Top View
PN Junction Guard Ring for Transient and
ESD Protection
V
G
MECHANICAL DATA
·
·
·
·
·
C
Case: SOT-523, Molded Plastic
Dim
Min
Max
A
1.500
1.700
B
0.780
0.820
C
0.800
0.820
0.320
D
0.280
G
0.900
1.100
H
0.000
0.100
J
0.100
0.200
K
0.350
0.410
L
0.490
0.510
Weight: 0.004 grams (approx.)
S
1.500
1.700
Mounting Position: Any
V
0.280
0.320
Terminals: Solderable per MIL-STD-202,
Method 208
H
D
Polarity: See Diagrams Below
J
K
3
1
All Dimension in mm
2
3
1
3
3
1
2
BAT54T Marking: L1
1
2
BAT54AT Marking: L2
3
2
1
BAT54CT Marking: L3
2
BAT54ST Marking: L4
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
150
4.2
mW
mW/°C
Forward Current (DC)
IF
200 Max
mA
TJ
125 Max
°C
Tstg
– 55 to +150
°C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
—
—
Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
—
7.6
10
pF
Reverse Leakage (VR = 25 V)
IR
—
0.5
2.0
µAdc
Forward Voltage (IF = 0.1 mAdc)
VF
—
0.22
0.24
Vdc
Forward Voltage (IF = 1.0 mAdc)
VF
—
0.29
0.32
Vdc
Forward Voltage (IF = 10 mAdc)
VF
—
0.35
0.40
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
—
—
5.0
ns
Forward Voltage (IF = 30 mAdc)
VF
—
0.41
0.50
Vdc
Forward Voltage (IF = 100 mAdc)
VF
—
0.52
1.00
Vdc
Reverse Breakdown Voltage (IR = 10 µA)
Forward Current (DC)
IF
—
—
200
mAdc
Repetitive Peak Forward Current
IFRM
—
—
200
mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s)
IFSM
—
—
400
mAdc
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
BAT54T Series
BAT54T / BAT54AT / BAT54CT / BAT54ST
Elektronische Bauelemente
Surface Mount Schottky Barrier Diode
820 Ω
+10 V
2k
0.1 µF
tr
IF
100 µH
0.1 µF
tp
IF
t
trr
10%
t
DUT
50 Ω Οutput
Pulse
Generator
50 Ω Input
Sampling
Oscilloscope
90%
IR(REC) = 1 mA
IR
VR
Output Pulse
(IF = IR = 10 mA; measured
at IR(REC) = 1 mA)
Input Signal
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
TA = 150°C
IR , Reverse Current (µA)
IF, Forward Current (mA)
100
1 50°C
10
1 25°C
1.0
85°C
25°C
0.1
0.0
– 40°C
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
– 55°C
TA = 25°C
0.001
0.1
0.2
0.3
0.4
0.5
0
0.6
5
V F, Forward Voltage (V)
Figure 2. Forward Voltage
10
15
20
VR, Reverse Voltage (V)
25
30
Figure 3. Leakage Current
14
C T , Total Capacitance (pF)
12
10
8
6
4
2
0
0
5
10
15
20
25
30
VR, Reverse Voltage (V)
Figure 4. Total Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2