SSE9971 25A, 60V,RDS(ON)36m Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description The SSE9971 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. Features * Low On-Resistance * Simple Drive Requirement REF. A b c D E L4 L5 D Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 G S Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS o Ratings Unit 60 V ± 20 V Continuous Drain Current,VGS@10V ID@TC=25 C 25 A Continuous Drain Current,VGS@10V o ID@TC=100C 16 A IDM 80 A 39 W 0.31 W/ C Pulsed Drain Current 1 Total Power Dissipation o PD@TC=25 C Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg o o C -55~+150 Thermal Data Symbol Parameter Thermal Resistance Junction-case Max. Thermal Resistance Junction-ambient Max. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Rthj-c Rthj-a Ratings Unit 3.2 o 62 o C /W C /W Any changing of specification will not be informed individual Page 1 of 4 SSE9971 25A, 60V,RDS(ON)36m Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Symbol Min. Typ. BVDSS 60 _ BVDS/ Tj _ 0.05 VGS(th) 1.0 _ 3.0 V VDS=VGS, ID=250uA IGSS _ _ ±100 nA VGS=±20V _ _ 10 uA VDS=60V,VGS=0 _ _ 25 uA VDS=48V,VGS=0 _ _ 36 o Drain-Source Leakage Current (Tj=25 C ) o Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance 2 IDSS RD S (O N ) Max. _ V _ V/ C _ _ 50 Total Gate Charge2 Qg _ 18 30 Gate-Source Charge Qgs _ 6 _ Gate-Drain ("Miller") Charge Qgd Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance _ 11 _ Td(ON) _ 9 _ Tr _ 24 _ Td(Off) _ 26 _ Tf _ 7 _ Ciss _ _ 1700 Unit o mΩ Test Condition VGS=0V, ID=250uA o Reference to 25 C, ID=1mA VGS=10V, ID=18A VGS=4.5V, ID=12A nC ID=18A VDS=48V VGS= 4.5V VDD=30V ID=18A nS VGS=10V RG=3.3Ω RD=1.67Ω 2700 pF VGS=0V VDS=25V _ S VDS=10V, ID=18A Typ. Max. Unit Output Capacitance Coss Reverse Transfer Capacitance Crss _ Forward Transconductance Gfs _ 17 Symbol Min. 160 110 _ f=1.0MHz _ Source-Drain Diode Parameter Test Condition Forward On Voltage 2 VSD _ _ 1.2 V IS=25 A, VGS=0V Reverse Recovery Time Trr _ 37 _ nS 38 _ nC Is=18A,VGS=0V, dl/dt=100A/us Reverse Recovery Charge Qrr _ Notes: 1.Pulse width limited by safe operating area. 2.Pulse width≦300us, dutycycle≦2%. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SSE9971 Elektronische Bauelemente 25A, 60V,RDS(ON)36m Ω N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Any changing of specification will not be informed individual Page 3 of 4 SSE9971 Elektronische Bauelemente Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 25A, 60V,RDS(ON)36m Ω N-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4