SGM2306 5.3A, 20V,RDS(ON) 32mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 Description The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306 is universally used for all commercial-industrial applications. Features * Capable Of 2.5V Gate Drive * Lower On-Resistance REF. A B C D E F D Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. G S Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, [email protected] Continuous Drain Current, [email protected] 1,2 Pulsed Drain Current 5.3 A o ID@TA=70 C 4.3 A IDM 10 A 1.5 W PD@TA=25 C Linear Derating Factor Tj, Tstg Operating Junction and Storage Temperature Range V V o Total Power Dissipation 20 ±12 ID@TA=25 C 3 Unit o VGS 3 Ratings 0.012 W / oC -55~+150 o C Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol 3 Max. Rthj-a Ratings 83.3 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 SGM2306 5.3A, 20V,RDS(ON) 32mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Symbol Min. Typ. Max. Unit BVDSS 20 _ _ V BVDS/ Tj _ 0.1 _ V/ C VGS(th) 0.5 _ 1.2 V VDS=VGS, ID=250uA IGSS _ _ ±100 nA VGS=± 12V _ _ 1 uA VDS=20V,VGS=0 _ _ 10 uA VDS=16V,VGS=0 _ _ 30 _ _ 35 o Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 IDSS RDS(ON) _ 90 VGS=1.8V, ID=1A 1.5 Gate-Drain ("Miller") Charge Qgd _ 3.6 _ 6 _ 14 _ Tr Turn-off Delay Time Fall Time Input Capacitance _ _ Td(Off) Tf _ 2.8 _ 603 _ 18.4 _ _ _ nC ID=5.3A VDS=10V VGS=4.5V VDS=15V ID=1A nS VGS=10V RG=2 Ω RD=15Ω _ _ VGS=0V VDS=15V 144 _ 111 _ _ 13 _ S Symbol Min. Typ. Max. Unit Test Condition VSD _ _ 1.2 V IS=1.2A, VGS=0V. Trr _ 16.8 _ nS Qrr _ 11 _ nC Output Capacitance Coss Reverse Transfer Capacitance Crss _ Gfs Forward Transconductance 8.7 _ Ciss VGS=4.5V, ID=5.3A _ Qgs Rise Time mΩ VGS=2.5V, ID=2.6A Gate-Source Charge Td(ON) VGS=10V, ID=5.5A 50 _ 2 o Reference to 25 C, ID=1mA _ _ Turn-on Delay Time VGS=0V, ID=250uA _ Qg 2 Total Gate Charge o Test Condition pF f=1.0MHz VDS=5V, ID=5.3A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Is=5A,VGS=0V dl/dt=100A/uS Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on FR4 board, t ≦10sec. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SGM2306 5.3A, 20V,RDS(ON) 32mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SGM2306 5.3A, 20V,RDS(ON) 32mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4